1803DFX NPN Power transistor.


MD1803DFX


High voltage NPN Power transistor for standard definition CRT display.

Features 


1803DFX NPN Power transistor.
  • State-of-the-art technology: – Diffused collector “enhanced generation”
  • More stable performance versus operating temperature variation
  • Low base drive requirement
  • Tighter hFE range at operating collector current
  • Fully insulated power package U.L. compliant
  • Integrated free wheeling diode
  • In compliance with the 2002/93/EC european directive


Applications

  • Horizontal deflection output for TV


Description

The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.



Electrical ratings.


Absolute maximum rating.

  • VCES- Collector-emitter voltage (VBE = 0) 1500 V
  • VCEO- Collector-emitter voltage (IB = 0) 700 V
  • VEBO- Emitter-base voltage (IC = 0) 10 V
  • IC- Collector current 10 A
  • ICM- Collector peak current (tP < 5ms) 15 A
  • IB- Base current 5 A
  • PTOT- Total dissipation at Tc = 25°C 57 W
  • Visol Insulation withstand voltage (rms) from all three leads to external heatsink 2500 V
  • Tstg Storage temperature -65 to 150 °C
  • TJ Max. operating junction temperature 150 °C

Thermal data

  • Rthj-case Thermal resistance junction-case Max 2.2 °C/W

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