Difference between normal diode and Solar PV diode

   In solar PV panel, P-N junction diode is used as solar PV cell which absorbs the light and convert light into electricity. But normal diode can not absorbs the light.

      Crystalline solar cells and photodiodes are basically the similar as p-n diodes. Nevertheless the diode is presented to light which give up a photocurrent notwithstanding the diode current. The majority of carriers give way to a photocurrent which contradicts the diode current in forward bias

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A photodiode can be said as semiconductor device which proselytes light into current. The current is produced when photons are caught up in the photodiode. Photodiodes are like general semiconductor diodes aside from that they might be either uncovered or bundled with optical fiber association with permit light to achieve the delicate piece of the gadget.

A solar cell, also known as photovoltaic cell, is an electrical gadget that changes over the vitality of light specifically into power by the photovoltaic impact, which is a physical and synthetic phenomenon. It is a type of photoelectric cell, characterized as a gadget whose electrical qualities, fluctuate when presented to light.

The solar cell is a pn-junction diode optimized to convert the incident solar radiation to electrical energy. Like wise every diode is optimized for its specific application such as rectifier diodes and zener diodes.

The major difference, however . is the metallization of the two electrodes, the anode and the cathode.

The back side of the solar cell which is normally the anode is completely metallized while the front side electrode is partially metallized in form of metal fingers and buss bars to allow light to pass to the active solar solar cell material and absorbed in the material to generate the photocurrent and at the same time collecting the photocurrent by the metal grid to access electrically the front electrode.

The other main difference is in the doping of the substrate material it is selected to optimize the the open circuit voltage while collecting an appreciable part of the incident radiation by adjusting its thicness. The optimum doping concentration fore silicon is about 10^17/cm^3 and the thicness is about 250 micrometer.

The normal diode is fully metallised from both sides an therefore it is opaque for light.